| PART |
Description |
Maker |
| HD6844 HD68B44 |
(HD68x44) Direct Memory Access Controller
|
Hitachi
|
| K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 |
256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| IDT70825L20G IDT70825L35G IDT70825L45G IDT70825S45 |
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
Cabinet Rack Front Panel RoHS Compliant: Yes 8K X 16 STANDARD SRAM, 20 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 35 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 8K X 16 STANDARD SRAM, 20 ns, CPGA84
HIGH-SPEED 8K x 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM)
|
SRAM
Integrated Device Technology, Inc.
|
| IDT70825S_L |
HIGH SPEED 128K (8K X 16 BIT) SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?)
|
IDT
|
| HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY
60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
| UN1210 UN1211 UN1212 UN1213 UN1214 UN1215 UN1216 U |
C; Package/Case:16-SO; Supply Voltage Max:3.6V; Page/Burst Read Access:1.4ms
Flash Memory IC; Access Time, Tacc:110ns; Package/Case:64-BGA; Supply Voltage:3V; Memory Size:64Mbit
Silicon NPN epitaxial planer transistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| Z84C00 Z8400 Z0840008VEC Z0840006VEC |
NMOS/CMOS Z80 CPU CENTRAL PROCESSING UNIT
MEMORY, SDRAM, DDR, 128MB, 8MX16, TSOP-66
Microprocessor
|
Zilog.
|
| CT1611 CT1611-FP |
DMA Controller with Buffer Memory,MIL-STD-1750A Compatible
|
Aeroflex Circuit Technology
Aeroflex Inc.
|
| AT88SC0204CA-MP88SC0204 AT88SC0204CA-WI88SC0204 AT |
SPECIALTY MEMORY CIRCUIT, DMA
SPECIALTY MEMORY CIRCUIT WAFER
SPECIALTY MEMORY CIRCUIT, PTSO8 4.40 MM, GREEN, PLASTIC, TSSOP-8
SPECIALTY MEMORY CIRCUIT, PDSO8 GREEN, PLASTIC, SOIC-8
SPECIALTY MEMORY CIRCUIT, QMA
|
Atmel, Corp.
ATMEL CORP
|
| CT1611 CT1611-FP |
From old datasheet system
DMA Controller with Buffer Memory,MIL-STD-1750A Compatible
|
AEROFLEX[Aeroflex Circuit Technology]
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
